Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.

Technology: general issues --- History of engineering & technology --- Energy industries & utilities --- energy storage system --- power conditioning system --- silicon carbide --- vanadium redox flow batteries --- AlGaN/GaN --- SiC --- high electron mobility transistor --- Schottky barrier diode --- breakdown field --- noise --- charge traps --- radio frequency --- wide-bandgap (WBG) --- gallium nitride (GaN) --- silicon carbide (SiC) --- high electron mobility transistor (HEMT) --- metal-oxide-semiconductor field effect transistor (MOSFET) --- driving technology --- nickel oxide --- annealing temperature --- crystallite size --- optical band gap --- electrochromic device --- indium oxide thin film --- solution method --- plasma surface treatment --- bias stability --- aluminum nitride --- Schottky barrier diodes --- radio frequency sputtering --- X-ray diffraction --- X-ray photoelectron spectroscopy --- piezoelectric micromachined ultrasonic transducers --- ranging --- time of flight (TOF) --- time to digital converter circuit (TDC) --- AlGaN/GaN heterojunction --- p-GaN gate --- unidirectional operation --- rectifying electrode --- first-principles --- density functional theory --- pure β-Ga2O3 --- Sr-doped β-Ga2O3 --- p-type doping --- band structure --- density of states --- optical absorption --- AlN buffer layer --- NH3 growth interruption --- strain relaxation --- GaN-based LED --- low defect density --- gate bias modulation --- palladium catalyst --- gallium nitride --- nitrogen dioxide gas sensor --- laser micromachining --- sapphire --- AlGaN/GaN heterostructures --- high-electron mobility devices --- p-GaN gate HEMT --- normally off --- low-resistance SiC substrate --- temperature --- high electron-mobility transistor (HEMT) --- equivalent-circuit modeling --- microwave frequency --- scattering-parameter measurements --- GaN --- MIS-HEMTs --- fabrication --- threshold voltage stability --- supercritical technology --- GaN power HEMTs --- breakdown voltage --- current collapse --- compensation ratio --- auto-compensation --- carbon doping --- HVPE --- AlN --- high-temperature --- buffer layer --- nitridation --- high-electron mobility transistor --- heterogeneous integration --- SOI --- QST --- crystal growth --- cubic and hexagonal structure --- blue and yellow luminescence --- electron lifetime --- wafer dicing --- stealth dicing --- laser thermal separation --- dry processing --- laser processing --- wide bandgap semiconductor --- photovoltaic module --- digital signal processor --- synchronous buck converter --- polar --- semi-polar --- non-polar --- magnetron sputtering --- HTA --- GaN-HEMT mesa structures --- 2DEG --- X-ray sensor --- X-ray imaging --- n/a

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.

energy storage system --- power conditioning system --- silicon carbide --- vanadium redox flow batteries --- AlGaN/GaN --- SiC --- high electron mobility transistor --- Schottky barrier diode --- breakdown field --- noise --- charge traps --- radio frequency --- wide-bandgap (WBG) --- gallium nitride (GaN) --- silicon carbide (SiC) --- high electron mobility transistor (HEMT) --- metal-oxide-semiconductor field effect transistor (MOSFET) --- driving technology --- nickel oxide --- annealing temperature --- crystallite size --- optical band gap --- electrochromic device --- indium oxide thin film --- solution method --- plasma surface treatment --- bias stability --- aluminum nitride --- Schottky barrier diodes --- radio frequency sputtering --- X-ray diffraction --- X-ray photoelectron spectroscopy --- piezoelectric micromachined ultrasonic transducers --- ranging --- time of flight (TOF) --- time to digital converter circuit (TDC) --- AlGaN/GaN heterojunction --- p-GaN gate --- unidirectional operation --- rectifying electrode --- first-principles --- density functional theory --- pure β-Ga2O3 --- Sr-doped β-Ga2O3 --- p-type doping --- band structure --- density of states --- optical absorption --- AlN buffer layer --- NH3 growth interruption --- strain relaxation --- GaN-based LED --- low defect density --- gate bias modulation --- palladium catalyst --- gallium nitride --- nitrogen dioxide gas sensor --- laser micromachining --- sapphire --- AlGaN/GaN heterostructures --- high-electron mobility devices --- p-GaN gate HEMT --- normally off --- low-resistance SiC substrate --- temperature --- high electron-mobility transistor (HEMT) --- equivalent-circuit modeling --- microwave frequency --- scattering-parameter measurements --- GaN --- MIS-HEMTs --- fabrication --- threshold voltage stability --- supercritical technology --- GaN power HEMTs --- breakdown voltage --- current collapse --- compensation ratio --- auto-compensation --- carbon doping --- HVPE --- AlN --- high-temperature --- buffer layer --- nitridation --- high-electron mobility transistor --- heterogeneous integration --- SOI --- QST --- crystal growth --- cubic and hexagonal structure --- blue and yellow luminescence --- electron lifetime --- wafer dicing --- stealth dicing --- laser thermal separation --- dry processing --- laser processing --- wide bandgap semiconductor --- photovoltaic module --- digital signal processor --- synchronous buck converter --- polar --- semi-polar --- non-polar --- magnetron sputtering --- HTA --- GaN-HEMT mesa structures --- 2DEG --- X-ray sensor --- X-ray imaging --- n/a

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits.

Technology: general issues --- GaN --- high-electron-mobility transistor (HEMT) --- ultra-wide band gap --- GaN-based vertical-cavity surface-emitting laser (VCSEL) --- composition-graded AlxGa1−xN electron blocking layer (EBL) --- electron leakage --- GaN laser diode --- distributed feedback (DFB) --- surface gratings --- sidewall gratings --- AlGaN/GaN --- proton irradiation --- time-dependent dielectric breakdown (TDDB) --- reliability --- normally off --- power cycle test --- SiC micro-heater chip --- direct bonded copper (DBC) substrate --- Ag sinter paste --- wide band-gap (WBG) --- thermal resistance --- amorphous InGaZnO --- thin-film transistor --- nitrogen-doping --- buried-channel --- stability --- 4H-SiC --- turn-off loss --- ON-state voltage --- breakdown voltage (BV) --- IGBT --- wide-bandgap semiconductor --- high electron mobility transistors --- vertical gate structure --- normally-off operation --- gallium nitride --- asymmetric multiple quantum wells --- barrier thickness --- InGaN laser diodes --- optical absorption loss --- electron leakage current --- wide band gap semiconductors --- numerical simulation --- terahertz Gunn diode --- grooved-anode diode --- Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) --- vertical breakdown voltage --- buffer trapping effect --- gallium nitride (GaN) --- power switching device --- active power filter (APF) --- power quality (PQ) --- metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) --- recessed gate --- double barrier --- high-electron-mobility transistors --- copper metallization --- millimeter wave --- wide bandgap semiconductors --- flexible devices --- silver nanoring --- silver nanowire --- polyol method --- cosolvent --- tungsten trioxide film --- spin coating --- optical band gap --- morphology --- electrochromism --- self-align --- hierarchical nanostructures --- ZnO nanorod/NiO nanosheet --- photon extraction efficiency --- photonic emitter --- wideband --- HEMT --- power amplifier --- jammer system --- GaN 5G --- high electron mobility transistors (HEMT) --- new radio --- RF front-end --- AESA radars --- transmittance --- distortions --- optimization --- GaN-on-GaN --- schottky barrier diodes --- high-energy α-particle detection --- low voltage --- thick depletion width detectors --- n/a

Choose an application

• Reference Manager
• EndNote
• RefWorks (Direct export to RefWorks)

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits.

GaN --- high-electron-mobility transistor (HEMT) --- ultra-wide band gap --- GaN-based vertical-cavity surface-emitting laser (VCSEL) --- composition-graded AlxGa1−xN electron blocking layer (EBL) --- electron leakage --- GaN laser diode --- distributed feedback (DFB) --- surface gratings --- sidewall gratings --- AlGaN/GaN --- proton irradiation --- time-dependent dielectric breakdown (TDDB) --- reliability --- normally off --- power cycle test --- SiC micro-heater chip --- direct bonded copper (DBC) substrate --- Ag sinter paste --- wide band-gap (WBG) --- thermal resistance --- amorphous InGaZnO --- thin-film transistor --- nitrogen-doping --- buried-channel --- stability --- 4H-SiC --- turn-off loss --- ON-state voltage --- breakdown voltage (BV) --- IGBT --- wide-bandgap semiconductor --- high electron mobility transistors --- vertical gate structure --- normally-off operation --- gallium nitride --- asymmetric multiple quantum wells --- barrier thickness --- InGaN laser diodes --- optical absorption loss --- electron leakage current --- wide band gap semiconductors --- numerical simulation --- terahertz Gunn diode --- grooved-anode diode --- Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) --- vertical breakdown voltage --- buffer trapping effect --- gallium nitride (GaN) --- power switching device --- active power filter (APF) --- power quality (PQ) --- metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) --- recessed gate --- double barrier --- high-electron-mobility transistors --- copper metallization --- millimeter wave --- wide bandgap semiconductors --- flexible devices --- silver nanoring --- silver nanowire --- polyol method --- cosolvent --- tungsten trioxide film --- spin coating --- optical band gap --- morphology --- electrochromism --- self-align --- hierarchical nanostructures --- ZnO nanorod/NiO nanosheet --- photon extraction efficiency --- photonic emitter --- wideband --- HEMT --- power amplifier --- jammer system --- GaN 5G --- high electron mobility transistors (HEMT) --- new radio --- RF front-end --- AESA radars --- transmittance --- distortions --- optimization --- GaN-on-GaN --- schottky barrier diodes --- high-energy α-particle detection --- low voltage --- thick depletion width detectors --- n/a